IRG4PC50F: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Typ	Max	Unit	Conditions
Input Voltage	V_IN		650	V
Continuous Drain Current	I_D	11		A	@ T_C = 25°C
Peak Pulse Current	I_PPM	37		A	@ T_C = 25°C, t < 10 μs
Total Gate Charge	Q_G	48		nC	@ V_DS = 400 V, I_D = 11 A
Turn-On Delay Time	t_d(on)	96		ns	@ V_DS = 400 V, I_D = 11 A
Rise Time	t_r	60		ns	@ V_DS = 400 V, I_D = 11 A
Turn-Off Delay Time	t_d(off)	55		ns	@ V_DS = 400 V, I_D = 11 A
Fall Time	t_f	60		ns	@ V_DS = 400 V, I_D = 11 A
Junction Capacitance	Ciss	1200		pF	@ V_DS = 400 V
Rth(j-c)	Rth(j-c)	1.4		°C/W

Handling and Storage:
- Store in a dry environment to prevent moisture damage.
- Handle with care to avoid electrostatic discharge (ESD); use appropriate ESD protection.
Mounting:
- Ensure proper heat sinking for continuous operation at high currents.
- Follow manufacturer guidelines for mounting torque and thermal interface materials.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Operate within the temperature range specified by the datasheet to ensure reliability.
Driving the Gate:
- Use a gate driver that can supply sufficient current to charge and discharge the gate capacitance quickly.
- Ensure the gate voltage is within the recommended range to avoid damaging the device or reducing its efficiency.
Testing:
- When testing the device, use controlled conditions that match those specified in the datasheet for accurate performance evaluation.
- Avoid prolonged operation at peak pulse currents to prevent overheating and potential failure.
Safety:
- Always follow safety guidelines when working with high voltages.
- Ensure all connections are secure and insulated to prevent short circuits.

(For reference only)