Description
BUY 2SC4742 https://www.utsource.net/itm/p/12607028.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Collector-Emitter Voltage |
VCEO |
- |
- |
60 |
V |
Collector-Base Voltage |
VCBO |
- |
- |
75 |
V |
Emitter-Base Voltage |
VEBO |
- |
- |
5 |
V |
Collector Current (Continuous) |
IC |
- |
8 |
- |
A |
Collector Current (Pulse) |
ICM |
- |
20 |
- |
A |
Power Dissipation |
PD |
- |
- |
125 |
W |
Transition Frequency |
ft |
- |
350 |
- |
MHz |
Storage Temperature Range |
Tstg |
-55 |
- |
150 |
°C |
Operating Junction Temperature |
TJ |
-55 |
- |
150 |
°C |
Instructions for Use:
- Mounting: Ensure the transistor is mounted with proper heat dissipation methods, especially considering its maximum power dissipation capability.
- Biasing: Carefully set up biasing networks to operate within the specified collector current limits to avoid damage.
- Handling: Handle the device with care to prevent electrostatic discharge (ESD) which can damage sensitive components.
- Temperature Monitoring: Monitor operating temperatures to ensure they remain within the operational junction temperature range.
- Voltage Ratings: Do not exceed the maximum voltage ratings between any two pins to prevent breakdown or permanent damage.
- Pulsed Operation: When using in pulsed applications, ensure that peak currents do not exceed the pulse current rating.
- Storage Conditions: Store in a controlled environment within the storage temperature range to maintain device integrity.
(For reference only)
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