BUY BTB16-800 https://www.utsource.net/itm/p/12607055.html
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Repetitive Peak Off-State Voltage | VDRM | - | 800 | - | V | Voltage at which the device is non-conductive in off-state |
Repetitive Peak Reverse Voltage | VRSM | - | 800 | - | V | Maximum reverse voltage that can be applied continuously |
Non-Repetitive Peak Off-State Voltage | VDRM(NR) | - | 1200 | - | V | Non-repetitive peak off-state voltage |
On-State Current (at Tj = 25°C) | IT(RMS) | - | 16 | - | A | RMS current through the device in on-state at 25°C junction temperature |
On-State Current (at Tj = 70°C) | IT(RMS) | - | 13.6 | - | A | RMS current through the device in on-state at 70°C junction temperature |
Holding Current | IH | 5 | - | - | mA | Minimum current required to maintain conduction |
Gate Trigger Voltage | VGT | 1.5 | - | 4 | V | Voltage required at gate to trigger the device |
Gate Trigger Current | IG(T) | 10 | - | 50 | mA | Current required at gate to trigger the device |
Power Dissipation | PD | - | - | 110 | W | Maximum power dissipation |
Junction Temperature | TJ | -55 | - | 125 | °C | Operating temperature range for the junction |
Storage Temperature | TSTG | -55 | - | 150 | °C | Temperature range for storage |