IRFI4212H-1: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-State Resistance	RDS(on)	-	24	-	mΩ	VGS = 10V, ID = 5A
Gate-Source Threshold Voltage	VGS(th)	2.0	-	4.0	V	ID = 250μA
Continuous Drain Current	ID	-	-	30	A	TC = 25°C
Pulse Drain Current	ID(pulse)	-	-	60	A	t = 10ms, TC = 25°C
Total Dissipation	PD	-	-	75	W	TC = 25°C
Junction Temperature	TJ	-20	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Mounting and Handling:
- Ensure the device is handled carefully to avoid damage to the leads.
- Use appropriate anti-static precautions during handling.
Thermal Considerations:
- Ensure adequate heat sinking if operating near maximum power dissipation.
- Monitor junction temperature to prevent overheating.
Biasing and Drive:
- Apply gate voltage within specified limits to avoid damaging the gate oxide.
- Use a gate resistor to limit current and dampen oscillations.
Operation:
- Do not exceed maximum ratings for drain-source voltage, continuous drain current, or pulse drain current.
- Ensure that the device operates within its safe operating area (SOA).
Storage:
- Store in a dry environment within the specified storage temperature range.
- Avoid exposure to corrosive environments.
Testing:
- Test parameters under controlled conditions to ensure accurate measurement.
- Refer to datasheet for detailed test circuits and procedures.

(For reference only)