Description
BUY 2SB176 https://www.utsource.net/itm/p/12607243.html
Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
Collector-Emitter Voltage |
VCEO |
|
|
|
40 |
V |
Collector-Base Voltage |
VCBO |
|
|
|
60 |
V |
Emitter-Base Voltage |
VEBO |
|
|
-5 |
|
V |
Collector Current |
IC |
|
|
2 |
3 |
A |
Base Current |
IB |
|
|
|
0.3 |
A |
Power Dissipation |
PD |
Tc = 25°C |
|
|
75 |
W |
Junction Temperature |
TJ |
|
-55 |
|
150 |
°C |
Storage Temperature |
TSTG |
|
-55 |
|
150 |
°C |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings listed in the table to prevent damage.
- Use appropriate heat sinks if operating near maximum power dissipation.
Mounting:
- Ensure proper mounting to maintain thermal performance, especially when operating at high currents or power levels.
- Follow mechanical specifications provided by the manufacturer for optimal performance and reliability.
Biasing:
- Ensure base current is within specified limits to avoid overheating and potential damage.
- Check that collector-emitter voltage does not exceed the rated maximum under all operating conditions.
Storage:
- Store in a dry environment within the temperature range specified to ensure long-term stability and performance.
Testing:
- When testing, use recommended test circuits to accurately assess device parameters without causing stress or damage.
For detailed application notes and more specific guidelines, refer to the datasheet provided by the manufacturer.
(For reference only)
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