BUY 2N5088RLRA https://www.utsource.net/itm/p/12607276.html
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector-Base Voltage (VCBO) | 60 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 150 | mA |
| Power Dissipation (Ptot) | 330 | mW |
| Transition Frequency (fT) | 250 | MHz |
| Storage Temperature Range (Tstg) | -65 to +150 | °C |
| Operating Junction Temperature (Tj) | -65 to +150 | °C |
Handling Precautions: The 2N5088RLRA is sensitive to electrostatic discharge (ESD). Handle with appropriate precautions such as using anti-static wrist straps and mats.
Mounting: Ensure proper mounting to avoid mechanical stress on the leads. Follow the manufacturer’s guidelines for soldering temperature and duration to prevent damage.
Biasing: Carefully set up biasing circuits to ensure the transistor operates within its safe operating area (SOA). Avoid exceeding maximum ratings for voltage and current.
Heat Management: If operating near the maximum junction temperature, consider heat sinking to improve thermal performance and reliability.
Testing: When testing or measuring parameters, use calibrated equipment to ensure accuracy. Keep test durations short to prevent self-heating effects that could skew results.
Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
Compliance: Ensure that the application complies with all relevant safety standards and regulations.
