2N6073BG
2N6073BG

 

2N6073BG

Utsource Holding Company Limited flag
Category: Available (Qty:9999999)
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Description

BUY 2N6073BG https://www.utsource.net/itm/p/12607281.html

Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 80 V
Emitter-Collector Voltage VECE - - 80 V
Collector-Base Voltage VCBO - - 80 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 15 A
DC Current Gain hFE 20 60 200 -
Transition Frequency fT - 4 - MHz
Power Dissipation PD - - 125 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C

Instructions for Use:

  1. Mounting: Ensure the device is mounted in a way that allows for proper heat dissipation, especially when operating near its maximum power dissipation limit.
  2. Biasing: Carefully set up the biasing circuit to operate within the specified current and voltage limits to avoid damage.
  3. Handling: Use appropriate anti-static measures during handling to prevent damage from electrostatic discharge (ESD).
  4. Derating: For continuous operation, derate the power dissipation linearly above +25°C junction temperature.
  5. Testing: When testing the device, ensure all parameters are within the specified limits to avoid premature failure.
  6. Storage: Store in a dry environment within the specified storage temperature range to maintain reliability.
(For reference only)

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