Description
BUY 2N5563 https://www.utsource.net/itm/p/12607436.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Collector-Emitter Voltage |
V(BR)CEO |
- |
- |
150 |
V |
Emitter-Base Voltage |
V(BR)EBO |
- |
- |
6 |
V |
Collector-Base Voltage |
V(BR)CBO |
- |
- |
150 |
V |
Collector Current |
IC |
- |
200 |
- |
mA |
Power Dissipation |
Ptot |
- |
350 |
- |
mW |
Transition Frequency |
fT |
- |
400 |
- |
MHz |
Storage Temperature |
Tstg |
-55 |
- |
150 |
°C |
Operating Temperature |
Toper |
-55 |
- |
150 |
°C |
Instructions for Use:
Handling Precautions:
- The 2N5563 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
Mounting:
- Ensure proper heat dissipation if operating near maximum power levels.
- Follow manufacturer guidelines for mounting orientation and mechanical stress limits.
Biasing:
- Operate within specified voltage and current limits to avoid damage.
- Use recommended biasing circuits to ensure stable operation.
Testing:
- During testing, do not exceed the maximum ratings listed in the table.
- Perform tests under controlled conditions to prevent accidental overvoltage or overcurrent scenarios.
Storage:
- Store in a dry, cool environment within the storage temperature range to maintain device integrity.
Soldering:
- Use a soldering iron with a temperature not exceeding 300°C for no longer than 10 seconds per connection to prevent thermal damage.
(For reference only)
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