Description
BUY MT48LC4M32B2P6A:G https://www.utsource.net/itm/p/12607677.html
Parameter |
Description |
Value |
Type |
Synchronous DRAM (SDRAM) |
- |
Organization |
x32 |
- |
Density |
4M x 32 |
- |
Voltage Supply (Vcc) |
Operating Voltage |
3.3V ±0.3V |
Voltage Supply (Vccq) |
I/O Power Supply |
3.3V ±0.3V |
Data Width |
I/O Configuration |
x32 |
Access Time (tAC) |
Access Time from CLK |
6.0 ns typical |
Cycle Time (tRC) |
Row Cycle Time |
60 ns typical |
Package |
Packaging Type |
FBGA |
Operating Temperature |
Industrial Temperature Range |
-40°C to +85°C |
Refresh |
Refresh Rate |
8K refresh cycles per 64ms |
CAS Latency |
CAS Latency |
CL=2, 3 |
Burst Length |
Supported Burst Lengths |
1, 2, 4, 8 |
Write Burst Mode |
Write Operation |
Programmable |
Drive Strength |
Output Drive Strength |
RZQ/6 |
Instructions for Use:
- Power Supply Requirements: Ensure that both Vcc and Vccq are supplied with 3.3V ±0.3V. Proper decoupling capacitors should be placed close to the power supply pins.
- Initialization: After applying power, ensure proper initialization of the device by following the sequence specified in the datasheet.
- Timing Parameters: Adhere strictly to the timing parameters such as tAC and tRC to avoid data corruption or loss.
- Refresh Operations: Implement a refresh cycle every 64ms to maintain data integrity.
- CAS Latency Setting: Configure the CAS latency according to system requirements, either CL=2 or CL=3.
- Burst Length Configuration: Set the burst length based on system needs; options include 1, 2, 4, and 8.
- Write Burst Mode: Enable or disable write burst mode as required by your application.
- Drive Strength Adjustment: Adjust the output drive strength if necessary, typically set to RZQ/6 for optimal performance.
- Temperature Considerations: Operate within the industrial temperature range (-40°C to +85°C) to ensure reliable operation.
- Handling and Storage: Follow standard ESD handling procedures and store in appropriate anti-static packaging when not in use.
(For reference only)
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