BUY IRLML2502PBF https://www.utsource.net/itm/p/12607760.html
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source On Resistance | RDS(on) | - | 0.12 | - | Ω | VGS = 4.5V, ID = 1A |
| Gate Threshold Voltage | VGS(th) | 0.8 | - | 2.0 | V | ID = 250μA |
| Continuous Drain Current | ID | - | - | 2.6 | A | TC = 25°C |
| Pulse Drain Current | ID(p) | - | - | 7.2 | A | TC = 25°C, t = 100μs |
| Power Dissipation | PD | - | - | 0.35 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
Handling Precautions: The IRLML2502PBF is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
Mounting: Ensure that the device is mounted on a suitable heat sink if operating at high currents or power levels to maintain junction temperature within limits.
Operating Conditions: Verify that the operating conditions do not exceed the maximum ratings provided in the table. Pay special attention to the drain-source voltage, gate-source voltage, and junction temperature.
Gate Drive Requirements: For optimal performance, ensure that the gate drive voltage is sufficient to fully turn on the MOSFET, typically around 4.5V to minimize RDS(on).
Storage: Store in a dry environment and observe the moisture sensitivity level (MSL) guidelines before soldering to prevent damage from moisture-related stresses.
Testing: After assembly, test the device under typical operating conditions to ensure it meets the required specifications.
Compliance: Ensure compliance with all relevant safety standards and regulations when using this component in your application.
