FDMS8333L

FDMS8333L

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY FDMS8333L https://www.utsource.net/itm/p/12607837.html

Parameter Symbol Test Conditions Min Typical Max Unit
Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 12A - 2.3 -
Gate Threshold Voltage VGS(th) ID = 1mA, TA = 25°C 0.8 - 1.6 V
Continuous Drain Current ID TC = 70°C - - 16 A
Pulse Drain Current ID(pulse) TP = 10μs, Duty Cycle = 1% - - 56 A
Power Dissipation PD TC = 70°C - - 2.2 W
Junction Temperature TJ - -20 - 150 °C
Storage Temperature Range TSTG - -55 - 150 °C

Instructions for Use:

  1. Handling Precautions:

    • The FDMS8333L is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
  2. Mounting and Assembly:

    • Ensure proper heat sinking if operating near the maximum continuous drain current or power dissipation limits.
    • Follow standard surface mount technology (SMT) assembly guidelines.
  3. Biasing and Operation:

    • Apply gate-source voltage (VGS) within specified limits to avoid damaging the device.
    • For optimal performance, operate within the recommended junction temperature range.
  4. Testing:

    • During testing, ensure that all parameters are within the specified limits to maintain reliability and performance.
  5. Storage:

    • Store in a dry environment within the specified storage temperature range to prevent damage.

For detailed application notes and more specific guidelines, refer to the manufacturer’s datasheet.

(For reference only)

More detail about Utsource Holding Company Limited
Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited