Description
BUY MTP3055V. https://www.utsource.net/itm/p/12607858.html
| Parameter |
Description |
Value |
Unit |
| VDSS |
Drain-Source Voltage |
55 |
V |
| ID |
Continuous Drain Current |
30 |
A |
| PD |
Total Power Dissipation |
1.6 |
W |
| RDS(on) |
On-State Resistance |
8.5 |
mΩ |
| Qg |
Gate Charge |
47 |
nC |
| VGS(th) |
Gate-Source Threshold Voltage |
2.0 to 4.0 |
V |
| TJ |
Junction Temperature Range |
-55 to +150 |
°C |
| Tstg |
Storage Temperature Range |
-55 to +150 |
°C |
| Package |
Type of Package |
TO-220 |
- |
Instructions for Use:
- Mounting: Ensure the MTP3055V is mounted on a heatsink if operating near maximum power dissipation to maintain safe junction temperatures.
- Gate Drive: Apply gate-source voltage within the specified threshold range (2.0 to 4.0V) for reliable switching operation.
- Overcurrent Protection: Design circuits with overcurrent protection mechanisms to prevent damage from excessive drain current.
- Thermal Management: Monitor junction temperature and ensure it remains within the operational limits (-55°C to +150°C).
- Storage Conditions: Store in a dry environment within the temperature range of -55°C to +150°C.
- Handling Precautions: Handle with care to avoid static discharge which can damage the MOSFET. Use appropriate ESD protection measures.
(For reference only)
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