BUY 2SD1288 https://www.utsource.net/itm/p/12607882.html
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 80 | V | IC = 10mA, IE = 0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IC = 0, IB = 5mA |
| Collector Current | IC | 3 | A | VCE = 20V |
| Continuous Total Dissipation | PD | 62.5 | W | TC = 25°C |
| Junction Temperature Range | TJ | -55 to 150 | °C | |
| Storage Temperature Range | TSTG | -55 to 150 | °C | |
| Transition Frequency | FT | 400 | MHz | IC = 150mA, VCE = 10V |
Handling Precautions: The 2SD1288 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate anti-static precautions.
Mounting: Ensure proper heat sinking when operating at high power levels to maintain the junction temperature within specified limits.
Biasing: Carefully set biasing conditions to avoid exceeding the maximum ratings for collector-emitter voltage and collector current.
Operating Environment: Operate within the specified temperature ranges to ensure reliable performance and longevity.
Testing: When testing or measuring parameters, adhere to the conditions specified in the parameter table to obtain accurate results.
Storage: Store in a dry, cool place within the storage temperature range to prevent damage.
Soldering: If soldering is required, do not exceed temperatures that could cause thermal shock or damage to the device.
