BUY 2SD316 https://www.utsource.net/itm/p/12607961.html
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | V CES | 600 | V |
| Collector Current (Continuous) | I C | 15 | A |
| Collector Current (Pulse) | I CM | 30 | A |
| Emitter-Base Voltage | V EBO | 5 | V |
| Power Dissipation | P T | 120 | W |
| Junction Temperature | T J | -55 to +150 | °C |
| Storage Temperature | T STG | -55 to +150 | °C |
Handling Precautions: Avoid exposing the device to temperatures outside its operational range (-55°C to +150°C). Ensure proper heat sinking when operating near maximum power dissipation.
Mounting: Mount the transistor in a way that ensures good thermal conductivity to a heatsink if operating at high currents or power levels.
Electrical Connections: Ensure all connections are secure and correctly wired. The collector, base, and emitter must be connected according to the circuit design specifications.
Protection Circuits: Incorporate appropriate protection circuits such as flyback diodes when using the transistor in switching applications to protect against voltage spikes.
Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
Derating: For continuous operation, derate the power dissipation linearly above an ambient temperature of 25°C to ensure reliable operation within safe limits.
