RB1-125BAG1A
RB1-125BAG1A

 

RB1-125BAG1A

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Category: Available (Qty:9999999)
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Description

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Parameter Description
Part Number RB1-125BAG1A
Type Power Bipolar Transistor
Configuration NPN
Package TO-220AB
Collector-Emitter Voltage (VCEO) 125 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 6 V
Continuous Collector Current (IC) 8 A at Tc = 25°C
Power Dissipation (PD) 125 W at Tc = 25°C
Junction Temperature (Tj) -55°C to +150°C
Storage Temperature (Tstg) -55°C to +150°C
Transition Frequency (ft) 3 MHz
DC Current Gain (hFE) 10 to 70 at IC = 2A, VCE = 10V

Instructions for Use:

  1. Mounting: Ensure the device is mounted on a suitable heatsink to manage heat dissipation, especially when operating near maximum power levels.
  2. Handling: Handle with care to avoid damage to the leads and body. Follow anti-static precautions to prevent damage from electrostatic discharge.
  3. Soldering: Solder within the recommended temperature and time limits to avoid thermal damage. Typical soldering temperature should not exceed 260°C for more than 10 seconds.
  4. Storage: Store in a dry environment within the specified storage temperature range to maintain reliability.
  5. Electrical Connections: Verify all electrical connections are secure and correct before applying power to prevent damage to the device or connected circuits.
  6. Operating Conditions: Operate within the specified voltage and current ratings to ensure reliable performance and longevity of the device.
(For reference only)

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