2SC3679.: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ.	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	80	V
Collector-Base Voltage	VCBO	-	-	90	V
Emitter-Base Voltage	VEBO	-1.5	-	-5	V
Collector Current	IC	-	3	10	A
Base Current	IB	-	0.3	1	A
DC Current Gain	hFE	20	70	200	-
Transition Frequency	fT	-	200	-	MHz
Power Dissipation	PD	-	-	62.5	W
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C

Mounting and Handling:
- Handle the 2SC3679 with care to avoid damage to its leads and body.
- Ensure proper heat sinking if operating near maximum power dissipation.
Biasing:
- Set the base current (IB) appropriately to achieve the desired collector current (IC) while considering the typical hFE range.
Voltage Ratings:
- Do not exceed the maximum ratings for VCEO, VCBO, and VEBO to prevent damage to the transistor.
Temperature Considerations:
- Operate within the specified junction temperature range to ensure reliable performance.
- Store in environments within the storage temperature range to avoid degradation.
Application:
- Suitable for general-purpose switching and amplification applications where high current and moderate frequency operation are required.
Testing:
- When testing or measuring parameters, use appropriate safety measures and equipment to avoid electrical hazards.

(For reference only)