IPZ40N04S5-3R1: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Value	Unit	Notes
Maximum Drain Current	ID	40	A	@TJ = 25°C
Peak Pulse Current	Ipp	180	A	tp = 10 μs, repetition rate 1
Maximum Gate-Source Voltage	VGS	±20	V
Maximum Drain-Source Voltage	VDS	400	V
On-State Resistance	RDS(on)	3.1	mΩ	@VGS = 10V, ID = 40A
Gate Charge	Qg	96	nC
Total Power Dissipation	PD	170	W	@TC = 25°C
Junction Temperature	TJ	-55 to +175	°C
Storage Temperature	TSTG	-55 to +150	°C

Handling and Installation: Handle the IPZ40N04S5-3R1 with care to avoid damage to the leads and body. Ensure that the device is securely mounted to a heatsink if operating near its maximum power dissipation.
Electrical Connections: Connect the gate, drain, and source terminals correctly. The gate terminal should be connected through a low inductance path to minimize switching losses.
Thermal Management: Ensure adequate cooling to keep the junction temperature within specified limits. Use thermal paste between the device and heatsink for better heat transfer.
Overcurrent Protection: Implement overcurrent protection to safeguard against excessive currents which can exceed the rated peak pulse current.
Gate Drive Requirements: Supply sufficient gate drive voltage (typically 10V or higher) to fully turn on the MOSFET and reduce conduction losses.
Storage Conditions: Store in a dry environment within the storage temperature range to prevent damage.
ESD Precautions: Follow standard ESD handling procedures to avoid damage from electrostatic discharge.

(For reference only)