Description
BUY MJL1302A https://www.utsource.net/itm/p/12608242.html
Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
Collector-Emitter Voltage |
Vceo |
- |
- |
800 |
V |
Tc = 25°C |
Emitter-Base Voltage |
Vebo |
- |
- |
7 |
V |
Tc = 25°C |
Collector Current |
Icm |
- |
- |
15 |
A |
Pulse, Tc = 25°C |
Power Dissipation |
Ptot |
- |
- |
115 |
W |
Tc = 25°C |
Junction Temperature |
Tj |
- |
- |
150 |
°C |
- |
Storage Temperature |
Tstg |
-65 |
- |
150 |
°C |
- |
Instructions for Use:
Mounting and Heat Sinking:
- Ensure adequate heat sinking to maintain junction temperature within specified limits.
- Use thermal compound between the transistor and heat sink for efficient heat transfer.
Biasing:
- Operate within specified voltage and current limits to avoid damage.
- Proper biasing is essential to prevent thermal runaway and ensure stable operation.
Pulse Operation:
- For pulse applications, ensure that peak currents do not exceed the maximum collector current (Icm).
- Derate power dissipation for continuous operation to avoid overheating.
Handling Precautions:
- Handle with care to avoid mechanical damage.
- Use proper anti-static precautions to prevent damage from electrostatic discharge (ESD).
Testing:
- Test under controlled conditions to ensure parameters are within specifications.
- Verify mounting and connections before applying power.
(For reference only)
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