MMF70R600P: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Value	Unit
Device Type	MOSFET	-
Maximum Drain-Source Voltage (VDS)	600	V
Maximum Gate-Source Voltage (VGS)	±20	V
Continuous Drain Current (ID)	70	A
Pulse Drain Current (IDM)	140	A
Power Dissipation (PD)	380	W
Junction Temperature (TJ)	-55 to +175	°C
Total Gate Charge (QG)	98	nC
Input Capacitance (Ciss)	3300	pF
Output Capacitance (Coss)	360	pF
Reverse Transfer Capacitance (Crss)	1200	pF
RDS(on) at VGS=10V	4.5	mΩ
Threshold Voltage (Vth)	2.0 to 4.0	V

Handling and Storage: Store in a dry, cool place away from direct sunlight. Handle with care to avoid static damage.
Mounting: Ensure proper heat sinking if operating near maximum current or power dissipation limits.
Biasing: Apply gate voltage within specified limits to prevent gate oxide damage.
Operation: Operate within the recommended temperature range to ensure reliable performance.
Testing: When testing, use caution to not exceed the maximum ratings listed in the table.
Safety: Always follow safe electrical practices when working with high voltages and currents.

For detailed application notes and further technical support, refer to the manufacturer’s datasheet or contact customer service.

(For reference only)