Description
BUY PC28F256M29EWHD https://www.utsource.net/itm/p/12608326.html
| Parameter |
Description |
| Device Name |
PC28F256M29EWHD |
| Type |
Flash Memory |
| Capacity |
256 Mbit (32 MB) |
| Vcc Supply Voltage |
2.7 V to 3.6 V |
| Operating Temperature |
-40°C to +85°C |
| Package Type |
BGA (Ball Grid Array) |
| Pin Count |
100 |
| Data Bus Width |
8-bit / 16-bit |
| Access Time |
70 ns |
| Programming Voltage |
Vpp not required, uses internal voltage pump |
| Erase Block Size |
64 Kbytes |
| Write Cycle Time |
2 ms for 256 bytes |
| Endurance |
100,000 program/erase cycles |
| Data Retention |
10 years |
| Features |
Auto Select, Burst Mode, Deep Power-down Mode |
Instructions:
- Power Supply: Ensure the supply voltage is within the specified range of 2.7 V to 3.6 V.
- Initialization: Before performing any read/write operations, initialize the device according to the datasheet specifications.
- Addressing: Use the appropriate addressing scheme based on the bus width (8-bit or 16-bit).
- Read Operations: Apply the read command followed by the address and then clock in the data.
- Write Operations: Perform a write cycle by sending the write enable command, address, and data. Wait for the write cycle to complete before initiating another operation.
- Erase Operations: To erase a block, send the block erase command followed by the starting address of the block. Confirm the erase status after completion.
- Power Management: Utilize the deep power-down mode to minimize power consumption when the device is not in use.
- Error Handling: Implement error checking mechanisms such as status register checks to ensure reliable operation.
- Handling Precautions: Handle with care to avoid static damage; follow ESD guidelines during installation and handling.
(For reference only)
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