IRFI4212H: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	200	-	V
Gate-Source Voltage	VGS	-15	0	15	V
Continuous Drain Current	ID	-	3.9	-	A	@ TC = 25°C, VGS = 10V
Pulse Drain Current	IDpeak	-	46	-	A	tp = 10 μs, Duty Cycle = 1%
Total Power Dissipation	PD	-	87	-	W	@ TC = 25°C
Junction Temperature	Tj	-	-	175	°C
Storage Temperature	Tstg	-55	-	150	°C

Handling and Storage:
- Ensure that the device is stored within the specified storage temperature range to avoid damage.
- Handle with care to prevent electrostatic discharge (ESD) which can damage the MOSFET.
Mounting:
- Mount the device in a way that allows for proper heat dissipation to maintain junction temperature within limits.
- Use appropriate mounting hardware and thermal interface materials to ensure good thermal conductivity.
Biasing:
- Apply gate-source voltage (VGS) within the specified limits to prevent gate oxide breakdown.
- Ensure that the drain-source voltage (VDS) does not exceed the maximum rating to avoid damaging the device.
Operation:
- Operate the device within the continuous drain current (ID) limits at the specified case temperature.
- For pulse applications, adhere to the pulse drain current (IDpeak) specifications including pulse width and duty cycle.
Testing:
- When testing or evaluating the device, follow the conditions specified in the parameter table to obtain accurate results.
Safety:
- Always refer to the data sheet for detailed safety and operational guidelines specific to this MOSFET model.

(For reference only)