Description
BUY BSS89 https://www.utsource.net/itm/p/12608542.html
| Parameter |
Symbol |
Value |
Unit |
Condition |
| Drain-Source Voltage (Max) |
VDSS |
50 |
V |
|
| Gate-Source Voltage (Max) |
VGS |
±20 |
V |
|
| Continuous Drain Current (Max) |
ID |
0.5 |
A |
Tc = 25°C |
| Pulsed Drain Current (Max) |
IDM |
1.7 |
A |
Tp = 1ms, Tc = 25°C |
| Gate Charge |
Qg |
4 |
nC |
|
| Input Capacitance |
Ciss |
60 |
pF |
VDS = 0V |
| Output Capacitance |
Coff |
30 |
pF |
VGS = 0V |
| Total Power Dissipation |
PD |
420 |
mW |
Tc = 25°C |
Instructions for Use:
- Handling Precautions: The BSS89 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
- Mounting: Ensure proper heat dissipation if operating near the maximum power dissipation limit. Consider heatsinks or PCB thermal vias.
- Biasing: Carefully set the gate-source voltage (VGS) within the specified range to avoid damaging the device.
- Current Limitations: Do not exceed the continuous or pulsed drain current limits to prevent overheating and potential damage.
- Storage: Store in a dry environment to prevent moisture damage. Follow recommended storage practices for semiconductor devices.
- Testing: When testing the device, ensure all parameters are within the specified limits to avoid misleading results or device failure.
(For reference only)
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