Description
BUY M5117400D-60SJ https://www.utsource.net/itm/p/12608560.html
| Parameter |
Description |
| Part Number |
M5117400D-60SJ |
| Type |
MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
| Configuration |
N-Channel |
| Package Type |
TO-220 |
| VDS (Drain-Source Voltage) |
60V |
| ID (Continuous Drain Current) |
30A at 25°C, derated by 1.1A/°C above 25°C up to 70°C |
| RDS(on) (On-Resistance) |
4.5 mΩ at VGS = 10V |
| VGS(th) (Gate Threshold Voltage) |
2.0V ~ 4.0V |
| Power Dissipation |
90W (at TA = 25°C) |
| Operating Temperature |
-55°C to +150°C |
| Storage Temperature |
-65°C to +175°C |
Instructions for Use:
Handling Precautions:
- The device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.
Mounting:
- Ensure proper heat sinking when operating at high currents to maintain junction temperature within safe limits.
- Follow the manufacturer’s guidelines for mounting torque and thermal interface materials.
Biasing:
- Apply gate voltage carefully; exceeding the maximum VGS can damage the device.
- For optimal performance, ensure VGS is within the specified range to achieve rated RDS(on).
Testing:
- During testing and debugging, limit current and voltage to avoid overstress conditions.
- Use pulsed testing methods if necessary to prevent overheating during evaluation.
Storage:
- Store in a dry, cool place away from direct sunlight and corrosive environments.
- Observe the storage temperature limits to preserve device integrity.
Applications:
- Suitable for power switching applications such as motor control, power supplies, and automotive electronics.
(For reference only)
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