Description
BUY 2SB527 https://www.utsource.net/itm/p/12608619.html
| Parameter |
Symbol |
Value |
Unit |
Conditions |
| Collector-Emitter Voltage |
V(BR)CEO |
80 |
V |
IC = 10mA |
| Collector-Base Voltage |
V(BR)CBO |
80 |
V |
IE = 0 |
| Emitter-Base Voltage |
V(BR)EBO |
5 |
V |
IC = 0 |
| Collector Current |
IC |
200 |
mA |
|
| Base Current |
IB |
20 |
mA |
|
| Power Dissipation |
PD |
625 |
mW |
Tc = 25°C |
| Junction Temperature |
TJ |
150 |
°C |
|
| Storage Temperature Range |
TSTG |
-55 to 150 |
°C |
|
Instructions for Use:
- Mounting: Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within limits.
- Biasing: Proper biasing of the base-emitter junction is essential to avoid exceeding the maximum base current and voltage ratings.
- Handling: Handle with care to prevent damage from electrostatic discharge (ESD). Use proper ESD protection measures.
- Operation: Operate within specified temperature ranges to ensure reliable performance and longevity.
- Testing: During testing, do not exceed the maximum ratings provided in the table to prevent damage to the transistor.
- Storage: Store in a cool, dry place within the specified storage temperature range to prevent degradation of performance characteristics.
(For reference only)
More detail about Utsource Holding Company Limited
