STP75NS04Z: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-source on-state resistance at ID = 10A, VGS = 10V	RDS(on)	Tc = 25°C	4.0		5.0	mΩ
Gate charge	Qg	VDS = 25V, ID = 10A			23	nC
Input capacitance	Ciss	VDS = 15V, f = 1MHz		1900		pF
Output capacitance	Coss	VDS = 15V, f = 1MHz		480		pF
Reverse transfer capacitance	Crss	VDS = 15V, ID = 1mA		70		pF
Total gate charge	Qg(tot)	VDS = 25V, ID = 10A			26	nC
Threshold voltage	VGS(th)	ID = 1mA, IDS = 250μA	1.0	1.5	2.5	V
Maximum drain current	ID	TC = 25°C	-		75	A
Maximum drain-source voltage	VDS		-		400	V
Maximum gate-source voltage	VGS		-		±20	V
Junction temperature	TJ		-55		150	°C
Storage temperature range	TSTG		-55		150	°C

Mounting and Handling:
- Handle the device with care to avoid damage to the pins.
- Ensure proper heat sinking if operating at high currents or in high ambient temperatures.
Electrical Connections:
- Connect the drain (D) to the high voltage side of the circuit.
- Connect the source (S) to the low voltage side or ground.
- Apply the gate (G) signal carefully to control the switching action.
Operating Conditions:
- Do not exceed the maximum ratings specified in the table.
- Keep the junction temperature within the operational limits by providing adequate cooling.
Testing and Verification:
- Verify the correct operation by measuring the threshold voltage and on-resistance.
- Test the device under actual operating conditions to ensure it meets performance requirements.
Storage and Packaging:
- Store in a dry, cool place away from direct sunlight.
- Follow anti-static precautions to prevent damage to the sensitive components.
Safety Precautions:
- Always disconnect power before handling the device.
- Use appropriate personal protective equipment when working with high voltages.

For detailed application notes and more specific guidance, refer to the official STMicroelectronics documentation for the STP75NS04Z.

(For reference only)