2SC1625

2SC1625

Category: Available (Qty:9999999)
For more information, visit our official website at utsource.us

Description

BUY 2SC1625 https://www.utsource.net/itm/p/12608713.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage Vceo Ic = 0 - - 80 V
Collector-Base Voltage Vcbo Ib = 0 - - 90 V
Emitter-Base Voltage Vebo Ie = 5mA - - 6 V
Collector Current Ic Vce = 30V - - 1 A
Base Current Ib Vce = 30V, Ic = 1A - - 0.1 A
DC Current Gain hFE Ic = 150mA 20 100 400 -
Transition Frequency ft Ic = 150mA - - 300 MHz
Power Dissipation Ptot Ta = 25°C - - 625 mW
Junction Temperature Tj - - 150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper handling to avoid damage from electrostatic discharge (ESD).
    • Mount the transistor in a way that ensures adequate heat dissipation if operating near maximum power.
  2. Biasing and Operation:

    • Operate within the specified voltage and current limits to prevent damage.
    • Use appropriate biasing circuits to ensure stable operation and prevent thermal runaway.
  3. Storage and Packaging:

    • Store in a dry, cool place away from direct sunlight.
    • Follow anti-static precautions during storage and transport.
  4. Testing:

    • When testing or measuring parameters, ensure that all conditions listed in the table are met for accurate results.
    • Use protective equipment and follow safety guidelines when conducting tests.
  5. Application Notes:

    • Refer to application notes provided by the manufacturer for detailed circuit design recommendations.
    • For high-frequency applications, consider the transition frequency limitations.
  6. Safety Precautions:

    • Do not exceed the maximum ratings as it can lead to device failure.
    • Ensure proper ventilation if operating at high temperatures or power levels.
(For reference only)

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