Description
BUY 10N80E https://www.utsource.net/itm/p/12608787.html
| Parameter |
Value |
Unit |
| Type |
N-Channel MOSFET |
- |
| Voltage (Vds) |
80 |
V |
| Current (Id) |
10 |
A |
| Power Dissipation (Ptot) |
26.5 |
W |
| Gate Charge (Qg) |
49 |
nC |
| Input Capacitance (Ciss) |
3700 |
pF |
| Output Capacitance (Coss) |
1100 |
pF |
| Rds(on) at 10V |
14 |
mΩ |
Instructions for Use:
- Handling Precautions: The 10N80E is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
- Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
- Operating Conditions:
- Ensure the drain-source voltage (Vds) does not exceed 80V.
- Do not exceed a continuous drain current (Id) of 10A.
- Gate Drive: Apply gate voltages within the specified range to avoid damage and ensure reliable operation.
- Storage: Store in a dry, cool environment away from direct sunlight.
- Application Circuits: Refer to datasheet application notes for typical circuits and layout recommendations.
(For reference only)
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