Description
BUY 2SK2226 https://www.utsource.net/itm/p/12608789.html
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
| Drain-source breakdown voltage |
BVDSS |
ID = 1mA |
|
450 |
|
V |
| Gate-source breakdown voltage |
BVGSS |
IG = 1mA |
|
30 |
|
V |
| Gate threshold voltage |
VGS(th) |
ID = 0.1mA, VDS = 10V |
2.0 |
3.0 |
4.0 |
V |
| On-resistance |
RDS(on) |
VGS = 10V, ID = 10A |
0.18 |
|
0.22 |
Ω |
| Input capacitance |
Ciss |
VDS = 25V, VGS = 0V |
|
1400 |
|
pF |
| Output capacitance |
Coss |
VDS = 25V, VGS = 0V |
|
350 |
|
pF |
| Reverse transfer capacitance |
Crss |
VDS = 25V, VGS = 0V |
|
70 |
|
pF |
| Total gate charge |
Qg |
VDS = 25V, VGS = 10V |
|
60 |
|
nC |
Instructions for Use:
- Handling Precautions: The 2SK2226 is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe procedures.
- Mounting: Ensure proper mounting and cooling solutions are used to dissipate heat, especially when operating at high currents.
- Biasing: Apply gate-source voltage (VGS) carefully within the specified limits to avoid damaging the device.
- Operation Limits: Do not exceed the maximum ratings provided in the table to prevent damage or degradation of performance.
- Testing: During testing, ensure that all conditions specified in the parameter table are met for accurate measurements.
- Storage: Store in a dry, cool place away from direct sunlight and sources of electromagnetic interference.
(For reference only)
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