FQPF18N80

FQPF18N80

Category: Available (Qty:9999999)
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Description

BUY FQPF18N80 https://www.utsource.net/itm/p/12608967.html

Parameter Symbol Conditions Min Typ Max Unit
Drain-Source Voltage VDS -80 80 V
Gate-Source Voltage VGS -20 20 V
Continuous Drain Current ID TC = 25°C 18 A
TC = 75°C 14 A
Pulse Drain Current IDM tp = 10 μs, Rep Rate 360 A
Power Dissipation PD TC = 25°C 215 W
TC = 75°C 140 W
Junction Temperature Tj -40 150 °C
Storage Temperature Tstg -55 150 °C

Instructions for FQPF18N80:

  1. Handling Precautions:

    • Use appropriate anti-static precautions when handling the device to avoid damage from electrostatic discharge (ESD).
  2. Mounting and PCB Layout:

    • Ensure adequate heat sinking if operating at high currents or in high ambient temperatures.
    • Place the component away from sources of heat and ensure good ventilation.
  3. Operating Limits:

    • Do not exceed the maximum ratings listed in the parameter table.
    • Ensure that the junction temperature remains within specified limits during operation.
  4. Gate Drive Requirements:

    • The gate requires a voltage between the minimum and maximum VGS ratings for proper operation.
    • Avoid rapid switching of the gate voltage to prevent excessive current spikes.
  5. Testing and Troubleshooting:

    • Regularly monitor the temperature and current levels to ensure they are within safe operating ranges.
    • If the device fails to operate correctly, check all connections and ensure that no other components are causing issues.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight and sources of heat.
    • Keep in original packaging until ready to use to protect against ESD.

For detailed application notes and more specific guidelines, refer to the manufacturer’s datasheet or technical documentation.

(For reference only)

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