BUY 2SC2632-R https://www.utsource.net/itm/p/12608990.html
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 60 | V | IC = 150mA |
| Collector-Base Voltage | VCBO | - | - | 60 | V | IC = 0 |
| Emitter-Base Voltage | VEBO | -5 | - | -2.5 | V | IE = 150mA |
| Collector Current | IC | - | 150 | - | mA | VCE = 30V |
| DC Current Gain | hFE | 70 | 200 | 400 | - | IC = 150mA, VCE = 10V |
| Transition Frequency | fT | - | 200 | - | MHz | IC = 10mA, VCE = 3V |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | - |
Mounting and Handling: Handle the 2SC2632-R with care to avoid damage to the leads or body. Use appropriate anti-static precautions.
Soldering: Ensure that the soldering temperature does not exceed 300°C and the duration of soldering at this temperature should not be more than 10 seconds per lead.
Biasing: For optimal performance, bias the transistor according to the specified conditions in the parameter table. Pay particular attention to the collector-emitter voltage (VCEO) and collector current (IC).
Heat Sinking: If operating near maximum power dissipation, use an appropriate heat sink to maintain safe operating temperatures.
Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
Testing: When testing the device, ensure that all voltages and currents are within the specified limits to prevent damage.
Application Circuits: Refer to application notes for specific circuit configurations and recommendations for using the 2SC2632-R in various applications.
