MTP3N120E: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	VDS	-	-	1200	V	Maximum drain-source voltage
Gate-Source Voltage	VGS	-10	-	20	V	Maximum gate-source voltage
Continuous Drain Current	ID	-	64	-	A	Continuous drain current at TC = 25°C
Pulse Drain Current	IDM	-	380	-	A	Pulse drain current (t = 10 μs, TC = 25°C)
Power Dissipation	PD	-	-	210	W	Total power dissipation at TC = 25°C
Junction Temperature	TJ	-55	-	175	°C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range

Handling Precautions: The MTP3N120E is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
Mounting: Ensure proper heat sinking to manage the thermal resistance, especially when operating near maximum continuous drain current or power dissipation.
Gate Drive: Apply gate voltages within the specified limits (-10V to +20V) to prevent damage to the device.
Pulse Operation: When using in pulse applications, ensure that the pulse width does not exceed the rated time (e.g., 10 μs) to avoid exceeding safe operating area (SOA) limits.
Temperature Monitoring: Monitor the junction temperature to stay within the operational limits (-55°C to +175°C).
Storage Conditions: Store in a controlled environment within the storage temperature range (-55°C to +150°C).

For detailed specifications and further information, refer to the datasheet provided by the manufacturer.

(For reference only)