2SK3812-ZP-E

2SK3812-ZP-E

Category: Available (Qty:9999999)
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Description

BUY 2SK3812-ZP-E https://www.utsource.net/itm/p/12609187.html

Parameter Value Unit
Part Number 2SK3812-ZP-E -
Type MOSFET -
Configuration N-Channel -
Drain to Source Voltage (Vds) 600 V
Continuous Drain Current (Id) 40 A
Gate to Source Voltage (Vgs) ±20 V
Power Dissipation (Pd) 375 W
Total Gate Charge (Qg) 300 nC
Input Capacitance (Ciss) 5600 pF
Output Capacitance (Coss) 150 pF
Reverse Transfer Capacitance (Crss) 300 pF
RDS(on) at VGS=10V 12
Junction Temperature (Tj) -55 to +150 °C
Storage Temperature (Tstg) -55 to +150 °C

Instructions:

  1. Handling and Storage:

    • Store in a dry environment within the temperature range specified.
    • Handle with care to avoid damage to the leads and body.
  2. Mounting:

    • Ensure proper heat sinking if operating near maximum power dissipation.
    • Follow standard practices for mounting semiconductor devices to prevent mechanical stress.
  3. Electrical Connections:

    • Connect the gate, drain, and source terminals correctly according to your circuit design.
    • Use short leads to minimize inductance and parasitic effects.
  4. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified junction temperature range to ensure reliability.
  5. Testing:

    • When testing or measuring parameters, use appropriate test equipment and methods to avoid damaging the device.
  6. Safety Precautions:

    • Always follow safety guidelines when working with high voltages and currents.
    • Ensure that all connections are secure and insulated as necessary.
(For reference only)

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