BC817-25 E6327: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Saturation Voltage	VCE(sat)	-	0.2	-	V	@ IC = 10mA, IB = 1mA
Emitter-Base Saturation Voltage	VEBO	-5	-	-0.9	V	@ IE = 5mA
Collector-Base Saturation Voltage	VCBO	-	-55	-	V	Reverse voltage
Current Gain (DC)	hFE	160	400	800	-	@ IC = 2mA, VCE = 5V
Transition Frequency	fT	-	300	-	MHz	@ IC = 1mA
Maximum Collector-Emitter Voltage	VCEO	-	-50	-	V
Maximum Collector Current	IC	-	-	500	mA	Continuous
Power Dissipation	PD	-	-	625	mW	@ Tc = 25°C
Operating Temperature Range	Toper	-55	-	150	°C

Mounting and Handling:
- Handle the transistor with care to avoid damage from electrostatic discharge (ESD).
- Ensure that the device is mounted in a way that allows for adequate heat dissipation if operating near its maximum power dissipation.
Biasing:
- For optimal performance, ensure that the base current (IB) is set appropriately to achieve the desired collector current (IC) within the specified range of the hFE parameter.
Operating Conditions:
- Operate the device within the specified temperature range (-55°C to +150°C) to ensure reliable operation.
- Do not exceed the maximum ratings listed for collector-emitter voltage, collector current, or power dissipation.
Testing:
- When testing the device, use conditions that match the typical parameters provided to get accurate readings.
- Be cautious when measuring high-frequency characteristics as they can be sensitive to test setup.
Storage:
- Store in a dry environment to prevent moisture damage.
- Keep in anti-static packaging until ready to use to protect against ESD.

(For reference only)