Description
BUY MG 50Q6ES40 https://www.utsource.net/itm/p/12609420.html
| Parameter |
Description |
Value |
| Part Number |
Full Part Number |
MG 50Q6ES40 |
| Type |
Type of Component |
MOSFET |
| Configuration |
Configuration |
N-Channel |
| VDS (Max) |
Drain-to-Source Voltage |
50 V |
| RDS(on) @ VGS=10V |
On-State Resistance at VGS=10V |
6 mΩ |
| ID (Continuous) |
Continuous Drain Current |
40 A |
| Package |
Package Type |
TO-220 |
| Operating Temp. |
Operating Temperature Range |
-55°C to +150°C |
| Gate Charge |
Gate Charge |
87 nC |
| Power Dissipation |
Maximum Power Dissipation |
118 W |
Instructions:
- Handling: Use appropriate anti-static precautions when handling the MG 50Q6ES40 to prevent damage from electrostatic discharge.
- Mounting: Ensure proper heat sinking if operating near maximum current or power dissipation limits.
- Soldering: Follow standard soldering guidelines for TO-220 packages. Avoid excessive heat during soldering to prevent damage.
- Testing: When testing, ensure that all voltages and currents are within specified limits to avoid damaging the device.
- Storage: Store in a dry, cool place away from direct sunlight and sources of heat.
(For reference only)
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