TBD 62783AFG: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description
Part Number	TBD 62783AFG
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel Enhancement Mode
VDS (Drain-Source Voltage)	±60V
RDS(on) (On-Resistance)	4.5 mΩ (Typical @ VGS = 10V, ID = 20A)
ID (Continuous Drain Current)	80A (at Tc = 25°C)
PD (Total Power Dissipation)	216W (at TC = 25°C)
Package Type	TO-247
Operating Temperature Range	-55°C to +175°C
Gate Charge (Qg)	169 nC (Typical @ VDS = 60V, ID = 80A)
Input Capacitance (Ciss)	4840 pF (Typical @ VDS = 0V, f = 1 MHz)
Output Capacitance (Coss)	1050 pF (Typical @ VDS = 60V, f = 1 MHz)
Reverse Transfer Capacitance (Crss)	890 pF (Typical @ VDS = 60V, f = 1 MHz)

Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
Mounting: Ensure good thermal contact with the heat sink or PCB for optimal performance. The TO-247 package allows for efficient heat dissipation.
Biasing: Apply gate-source voltage (VGS) within the specified limits to avoid damaging the device. Typical operating range is from -10V to +20V.
Current Limitation: Do not exceed the maximum continuous drain current (ID) rating. Consider derating at higher temperatures.
Thermal Management: Monitor junction temperature (Tj) to ensure it remains within operational limits. Use appropriate cooling methods if necessary.
Storage Conditions: Store in a dry environment away from direct sunlight and excessive heat. Follow recommended storage guidelines to maintain reliability.

For detailed application notes and further specifications, refer to the manufacturer’s datasheet.

(For reference only)