IXGR60N60U1

IXGR60N60U1

Category: Available (Qty:9999999)
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Description

BUY IXGR60N60U1 https://www.utsource.net/itm/p/12609428.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage V CES 600 V
Collector Current I C T C = 25°C 6.0 A
Power Dissipation P TOT T C = 25°C 110 W
Junction Temperature T J -55 175 °C
Storage Temperature T STG -55 175 °C
Gate Charge Q G V GE = ±15V 48 nC
Total Gate Charge Q GT V GE = ±15V 53 nC
Turn-off Time t D(off) I C = 6A, E = 300V 90 ns
Turn-on Time t r I C = 6A, E = 300V 76 ns

Instructions for IXGR60N60U1:

  1. Handling and Storage:

    • Ensure the device is stored within the specified storage temperature range (-55°C to 175°C).
    • Handle with care to avoid damage to the leads or body.
  2. Mounting and PCB Layout:

    • Use appropriate mounting techniques to ensure good thermal contact if heatsinking is required.
    • Keep lead lengths as short as possible to minimize inductance.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (600V) or collector current (6.0A at 25°C).
    • Ensure that power dissipation does not exceed 110W at 25°C ambient temperature.
  4. Gate Drive Requirements:

    • Provide sufficient gate charge (Qg ≈ 48nC) for reliable switching.
    • Pay attention to total gate charge (Qgt ≈ 53nC) for accurate timing calculations.
  5. Switching Characteristics:

    • Be aware of the turn-off time (td(off) ≈ 90ns) and turn-on time (tr ≈ 76ns) when designing switching circuits.
  6. Thermal Management:

    • Monitor junction temperature to stay within the safe operating range (-55°C to 175°C).
    • Implement adequate cooling solutions if operating near maximum power dissipation.
(For reference only)

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