BDV66B

BDV66B

Category: Available (Qty:9999999)
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Description

BUY BDV66B https://www.utsource.net/itm/p/12609463.html

Parameter Symbol Min Typ Max Unit Description
Collector-Emitter Voltage VCEO - - 80 V Maximum voltage between collector and emitter with the base open.
Emitter-Collector Voltage VEBO -5 - - V Maximum voltage between emitter and collector with the base open.
Collector Current IC - - 150 mA Maximum continuous collector current.
Power Dissipation PD - - 625 mW Maximum power dissipation at T_A = 25°C.
Operating Junction Temperature TJop -55 - 150 °C Operating junction temperature range.
Storage Temperature Range TStg -55 - 150 °C Storage temperature range.

Instructions for BDV66B:

  1. Mounting: Ensure proper heat sinking if operating near maximum power dissipation to maintain device reliability.
  2. Biasing: Use appropriate biasing circuits to ensure stable operation within specified limits.
  3. Handling: Handle with care to avoid damage from electrostatic discharge (ESD).
  4. Soldering: Follow standard soldering practices, ensuring temperatures do not exceed the storage temperature range to prevent thermal damage.
  5. Testing: Test in a controlled environment to ensure parameters meet specifications before deployment in critical applications.
(For reference only)

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