NTGD4161PT1G: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = ±10V, ID = 4A	-	1.6	-	mΩ
Gate Charge	QG	VGS = ±5V	-	23	-	nC
Input Capacitance	Ciss	VDS = 10V, f = 1MHz	-	790	-	pF
Output Capacitance	Coss	VDS = 10V, f = 1MHz	-	260	-	pF
Reverse Transfer Capacitance	Crss	VDS = 10V, f = 1MHz	-	530	-	pF
Continuous Drain Current	ID	TC = 25°C	-	4.8	-	A
Pulse Drain Current	IDM	TP = 10ms, TC = 25°C	-	12	-	A
Gate-Source Voltage	VGS	-	-10	-	10	V
Drain-Source Breakdown Voltage	BVDSS	IG = 250μA	-	60	-	V

Handling and Storage:
- Store in a dry, cool place.
- Handle with care to avoid damage to the leads and body.
Mounting:
- Ensure proper heat sinking if operating at high currents or power levels.
- Use recommended soldering profiles to avoid thermal stress.
Electrical Connections:
- Verify that gate drive voltages do not exceed VGS ratings.
- Connect the drain and source leads correctly to avoid short circuits.
Operational Guidelines:
- Operate within specified temperature and voltage limits.
- Monitor junction temperature to ensure it remains within safe operational limits.
Testing:
- Perform initial testing under controlled conditions to validate performance parameters.
- Use appropriate test equipment calibrated to industry standards.

(For reference only)