Description
BUY D6020L https://www.utsource.net/itm/p/12609526.html
Parameter |
Description |
Value |
Unit |
Part Number |
Device Identifier |
D6020L |
- |
Type |
Device Type |
MOSFET |
- |
Configuration |
Channel Type |
N-Channel |
- |
VDS |
Drain-to-Source Voltage |
60 |
V |
RDS(on) |
On-State Resistance at VGS=10V |
20 |
mΩ |
ID |
Continuous Drain Current |
80 |
A |
PD |
Total Power Dissipation |
150 |
W |
VGS(th) |
Gate Threshold Voltage |
2.0 to 4.0 |
V |
Package |
Housing Style |
TO-220 |
- |
Operating Temp |
Junction Temperature Range |
-55 to 150 |
°C |
Instructions for Use:
Handling Precautions:
- Ensure proper ESD (Electrostatic Discharge) protection when handling the D6020L to avoid damage.
Mounting:
- Mount the device on a heatsink if operating near maximum power dissipation to ensure adequate heat transfer and maintain junction temperature within limits.
Biasing:
- Apply gate voltage carefully; exceeding the VGS(th) can lead to excessive current draw and potential device failure.
Storage:
- Store in a dry, cool place away from direct sunlight and sources of heat.
Testing:
- When testing or measuring parameters, ensure that all voltages and currents do not exceed the absolute maximum ratings specified in the table.
Applications:
- Suitable for switching applications, motor control, and power supply circuits where low on-resistance is beneficial.
(For reference only)
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