IGBT-FT150R12KE3_B5: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES	I C = 0, T j = 25°C	-		1200	V
Gate-Emitter Voltage	V GES	I C = 0, T j = 25°C	-15		15	V
Continuous Collector Current	I C	T case = 25°C	-	150		A
Pulse Collector Current	I CM	T j = 25°C, t = 10 μs	-	600		A
Total Dissipation	P tot	T case = 25°C	-		1700	W
Junction Temperature	T j		-55		150	°C
Storage Temperature	T stg		-55		150	°C

Installation and Handling:
- Handle the IGBT-FT150R12KE3_B5 with care to avoid damage to terminals and the body.
- Ensure that the mounting surface is clean and flat to achieve optimal thermal contact.
Mounting Torque:
- Apply a mounting torque of 4-6 Nm when attaching the device to a heat sink.
Thermal Management:
- Use an appropriate heat sink or cooling system to maintain the junction temperature within specified limits.
- Ensure adequate airflow if using forced air cooling.
Electrical Connections:
- Connect the gate and emitter leads carefully to prevent short circuits.
- Use insulated tools to avoid electrical shocks.
Operating Conditions:
- Do not exceed the maximum ratings listed in the parameter table.
- Operate the device within the recommended operating conditions to ensure reliability and longevity.
Storage:
- Store in a dry, cool place away from direct sunlight and corrosive substances.
- Keep in original packaging until ready for use to protect against static damage.
Safety Precautions:
- Always follow proper safety procedures when handling high voltage and current components.
- Use protective equipment such as gloves and goggles as necessary.

(For reference only)