2SB1163A
2SB1163A

 

2SB1163A

Utsource Holding Company Limited flag
Category: Available (Qty:9999999)
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Description

BUY 2SB1163A https://www.utsource.net/itm/p/12609705.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO IC = 0 - - 80 V
Emitter-Collector Voltage VECE IE = 0 - - 80 V
Base-Emitter Voltage VBE IC = -1mA, f = 1Hz -2.5 - -1.5 V
Collector Current IC VCE = 30V - - 3 A
DC Current Gain hFE IC = -1A, VCE = -10V 75 250 600 -
Transition Frequency fT IC = -10mA - 400 - MHz
Power Dissipation PD TA = 25°C - - 125 mW
Storage Temperature Tstg - -55 - 150 °C
Operating Temperature TJ - -55 - 150 °C

Instructions for Use:

  1. Handling Precautions: The 2SB1163A is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
  2. Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits.
  3. Biasing: For optimal performance, ensure the base-emitter junction is biased within specified voltage limits.
  4. Operation Limits: Do not exceed the maximum ratings listed in the table to prevent damage or reduced lifespan.
  5. Storage and Environment: Store in a dry environment and operate within the specified temperature range to avoid degradation of performance characteristics.
(For reference only)

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Utsource Holding Company Limited
Utsource Holding Company Limited Electronic Component Wholesaler, IC Chip Distributor, IGBT Module Supplier in California, USA | Utsource Holding Company Limited
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