Description
BUY N82S131AN https://www.utsource.net/itm/p/12609718.html
| Parameter |
Description |
Value |
Unit |
| Device Type |
High-Speed CMOS Static RAM |
|
|
| Organization |
8K x 8 |
|
bits |
| Supply Voltage (Vcc) |
Operating voltage |
2.5 to 3.6 |
V |
| Standby Current |
Quiescent current in standby mode |
1 |
μA |
| Active Current |
Current consumption during active operation |
40 |
mA |
| Access Time |
Time required for read/write operations |
10 |
ns |
| Data Retention Time |
Duration data is retained without power |
20 |
years |
| Operating Temperature |
Temperature range for reliable operation |
-40 to +85 |
°C |
| Package Type |
Physical package |
SOIC-18 |
|
| Pin Count |
Number of pins |
18 |
|
Instructions for Use:
Power Supply Connection:
- Connect the Vcc pin to a stable power supply between 2.5V and 3.6V.
- Ensure the GND pin is properly grounded.
Signal Timing:
- Ensure all control signals (CE, OE, WE) are synchronized with the system clock to avoid data corruption.
- Maintain proper setup and hold times for address and data lines as specified in the datasheet.
Write Operation:
- Set the Write Enable (WE) signal low to initiate a write cycle.
- Provide the address and data within the specified timing constraints.
Read Operation:
- Set the Output Enable (OE) signal low to initiate a read cycle.
- The data will be available on the data bus after the specified access time.
Standby Mode:
- To enter standby mode, set the Chip Enable (CE) high. This minimizes power consumption.
Handling Precautions:
- Handle the device with care to prevent electrostatic discharge (ESD) damage.
- Follow anti-static protocols when handling or installing the device.
Storage:
- Store the device in an ESD-safe environment when not in use.
- Avoid exposure to extreme temperatures and humidity.
(For reference only)
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