MGA82563TR1G: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Description	Value	Unit
Device	MGA82563TR1G
Type	GaN FET (Gallium Nitride Field-Effect Transistor)
Configuration	Single N-Channel
VDS (Drain-to-Source Voltage)	Maximum voltage between drain and source terminals	600	V
RDS(on) (On-State Resistance)	Resistance when the device is fully on	14	m惟
ID (Continuous Drain Current)	Maximum continuous current through the drain terminal	40	A
Power Dissipation	Maximum power dissipation	2.9	W
Junction Temperature	Maximum operating temperature of the semiconductor junction	175	掳C
Package Type	LFPAK56 (Power SO-8 with exposed pad)
Operating Temperature	Ambient temperature range for operation	-55 to +175	掳C

Handling Precautions: The MGA82563TR1G is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
Mounting: Ensure proper mounting techniques are used to ensure good thermal conductivity, especially considering the high-power capabilities of this device.
Biasing: Apply gate-source voltage (VGS) within specified limits to avoid damage or improper operation.
Thermal Management: Given its power dissipation capability, ensure adequate heat sinking or cooling solutions are in place to manage heat effectively.
Storage Conditions: Store in a dry environment, away from direct sunlight and extreme temperatures.
Soldering: Follow recommended soldering profiles to prevent damage during assembly. Avoid excessive heat and time exposure during soldering.
Testing: Before incorporating into final designs, test under conditions similar to expected operational environments to ensure reliability.

For detailed specifications and further instructions, refer to the official datasheet provided by the manufacturer.

(For reference only)