MJE200G: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	100	V	IC = 0.5A, Tc = 25掳C
Emitter-Collector Voltage	VECEO	-	-	100	V	IC = 0.5A, Tc = 25掳C
Collector-Base Voltage	VCBO	-	-	100	V	IC = 0, Tc = 25掳C
Emitter-Base Voltage	VEBO	-	-5	-6	V	IE = 5mA, Tc = 25掳C
Collector Current	IC	-	-	0.5	A	VCE = 1V, Tc = 25掳C
DC Current Gain	hFE	25	75	200	-	IC = 150mA, VCE = 10V
Transition Frequency	fT	-	30	-	MHz	IC = 150mA, VCE = 1V
Storage Temperature	Tstg	-65	-	150	掳C
Junction Temperature	TJ	-65	-	150	掳C

Handling and Storage:
- Store the device in a dry environment within the specified storage temperature range (-65掳C to +150掳C).
- Handle with care to avoid damage to leads and body.
Mounting:
- Ensure proper heat sinking if operating near maximum power dissipation.
- Avoid mechanical stress on the leads during soldering and mounting.
Electrical Connections:
- Connect the emitter lead directly to the ground plane to minimize noise pickup.
- Use short leads to reduce parasitic inductance and capacitance effects.
Operating Conditions:
- Do not exceed the maximum ratings provided in the table.
- Ensure that the junction temperature does not exceed 150掳C to prevent thermal runaway.
Testing and Troubleshooting:
- Measure VCE to check for proper biasing and operation.
- Verify hFE to ensure adequate current gain for the application.
Application Notes:
- Refer to manufacturer datasheets for detailed application circuits and typical performance graphs.
- Consider using bypass capacitors to stabilize supply voltages and reduce noise.

This information should help in effectively using the MJE200G transistor in various electronic designs.

(For reference only)