2SC2979: Top Choice in United States (USA) Utsource Holding Company Limited

Description

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	IC = 0.5 mA	-	-	40	V
Collector-Base Voltage	V(BR)CBO	IE = 0	-	-	60	V
Emitter-Base Voltage	V(BR)EBO	IC = 5 mA	-	-	6	V
Collector Current	IC	VCE = 30 V	-	1	2	A
DC Current Gain	hFE	IC = 150 mA, VCE = 5 V	50	200	400	-
Transition Frequency	fT	IC = 150 mA, VCE = 5 V	-	150	-	MHz
Power Dissipation	PD	Ta = 25掳C	-	-	125	mW
Junction Temperature	Tj	Operating range	-55	-	150	掳C

Handling Precautions:
- Avoid exceeding the maximum ratings listed in the table to prevent damage to the transistor.
- Use appropriate heat sinking if operating near the maximum power dissipation.
Biasing and Operation:
- Ensure that the base-emitter voltage (VBE) is within the specified limits to avoid excessive current.
- For optimal performance, operate within the typical values of hFE (DC current gain).
Storage and Environment:
- Store in a dry environment away from high temperatures and humidity.
- Operate within the specified junction temperature range to ensure reliability.
Mounting:
- Follow recommended mounting procedures to ensure proper thermal transfer and mechanical stability.
- Ensure good electrical connections to all terminals.
Testing:
- When testing or measuring parameters, use conditions as close as possible to those specified in the parameter table for accurate results.

(For reference only)