BF422 F422

BF422 F422

Category: Available (Qty:9999999)
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Description

BUY BF422 F422 https://www.utsource.net/itm/p/12609914.html

Parameter BF422/F422
Type NPN Silicon Transistor
Collector-Emitter Voltage (Vce) 45 V
Collector Base Voltage (Vcb) 50 V
Emitter-Base Voltage (Veb) 6 V
Continuous Collector Current (Ic) 650 mA
DC Current Gain (hFE) 100 - 700
Transition Frequency (ft) 300 MHz
Power Dissipation (Ptot) 625 mW
Junction Temperature (Tj) -55 to 150 掳C
Storage Temperature (Tstg) -65 to 150 掳C

Instructions for Use:

  1. Handling Precautions: The BF422/F422 is sensitive to electrostatic discharge (ESD). Use proper handling procedures such as anti-static wrist straps and packaging.
  2. Mounting: Ensure the transistor is mounted in a way that allows adequate heat dissipation, especially if operating near maximum power dissipation limits.
  3. Biasing: Proper biasing of the base-emitter junction is critical for reliable operation. Ensure that the base current is sufficient to fully saturate the transistor when used as a switch.
  4. Operating Conditions: Do not exceed the maximum ratings listed in the parameter table. Operating beyond these limits can cause permanent damage to the device.
  5. Storage: Store in a dry, cool environment to prevent degradation of performance over time.
  6. Testing: When testing the transistor, use appropriate test equipment settings to avoid overstressing the device.
(For reference only)

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