G5318RE1D

G5318RE1D

Category: Available (Qty:9999999)
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Description

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Parameter Description Value Unit
Part Number Device Identifier G5318RE1D -
Type Device Type MOSFET -
Configuration Channel Type N-Channel -
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 卤20 V
ID Continuous Drain Current 4.7 A
RDS(on) On-State Resistance at VGS=10V 0.015
Power Dissipation Maximum Power Dissipation 0.9 W
Operating Temp Junction Temperature Range -55 to +150 掳C
Package Enclosure Type TO-252 (DPAK) -

Instructions for Use:

  1. Handling Precautions: The G5318RE1D is an electrostatic discharge (ESD) sensitive device. Handle with care and use appropriate ESD protection measures.
  2. Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation limits to maintain junction temperature within specified range.
  3. Biasing: Apply gate voltages within the specified VGS limits to avoid damage or unreliable operation.
  4. Current Limitation: Do not exceed the continuous drain current rating. For pulse applications, ensure average power dissipation does not exceed the maximum rated power.
  5. Storage: Store in original packaging in a dry environment to prevent moisture damage. Follow recommended storage practices for semiconductor devices.
  6. Testing: When testing the device, use low voltage/current settings initially to prevent accidental damage. Always refer to the data sheet for specific test conditions.
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