Description
BUY G5318RE1D https://www.utsource.net/itm/p/12609934.html
Parameter |
Description |
Value |
Unit |
Part Number |
Device Identifier |
G5318RE1D |
- |
Type |
Device Type |
MOSFET |
- |
Configuration |
Channel Type |
N-Channel |
- |
VDS |
Drain-Source Voltage |
60 |
V |
VGS |
Gate-Source Voltage |
卤20 |
V |
ID |
Continuous Drain Current |
4.7 |
A |
RDS(on) |
On-State Resistance at VGS=10V |
0.015 |
惟 |
Power Dissipation |
Maximum Power Dissipation |
0.9 |
W |
Operating Temp |
Junction Temperature Range |
-55 to +150 |
掳C |
Package |
Enclosure Type |
TO-252 (DPAK) |
- |
Instructions for Use:
- Handling Precautions: The G5318RE1D is an electrostatic discharge (ESD) sensitive device. Handle with care and use appropriate ESD protection measures.
- Mounting: Ensure proper mounting on a heatsink if operating near maximum power dissipation limits to maintain junction temperature within specified range.
- Biasing: Apply gate voltages within the specified VGS limits to avoid damage or unreliable operation.
- Current Limitation: Do not exceed the continuous drain current rating. For pulse applications, ensure average power dissipation does not exceed the maximum rated power.
- Storage: Store in original packaging in a dry environment to prevent moisture damage. Follow recommended storage practices for semiconductor devices.
- Testing: When testing the device, use low voltage/current settings initially to prevent accidental damage. Always refer to the data sheet for specific test conditions.
(For reference only)
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