MBI6661GSD

MBI6661GSD

Category: Available (Qty:9999999)
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Description

BUY MBI6661GSD https://www.utsource.net/itm/p/12610103.html

Parameter Symbol Conditions Min Typ Max Unit
Supply Voltage VDD Operating 3.0 - 5.5 V
Output Current per Channel IO Per Channel - 120 - mA
Power Dissipation PD Continuous Operation - - 1400 mW
Operating Temperature TOPR Junction Temperature -40 - 85 掳C
Storage Temperature TSTG Storage -65 - 150 掳C
Input Voltage High VIH Input Recognition 2.0 - VDD V
Input Voltage Low VIL Input Recognition 0 - 0.8 V

Instructions for MBI6661GSD

  1. Supply Voltage (VDD):

    • Ensure the supply voltage is within the range of 3.0V to 5.5V to avoid damage or malfunction.
  2. Output Current:

    • Each channel can provide up to 120mA of current. Do not exceed this limit to prevent overheating and potential damage.
  3. Power Dissipation:

    • The device can dissipate up to 1400mW continuously. Ensure adequate heat sinking if operating near this limit.
  4. Temperature Range:

    • Operate the device within -40掳C to 85掳C junction temperature and store it between -65掳C and 150掳C.
  5. Input Voltage Levels:

    • For reliable operation, input voltages should be set such that high levels are above 2.0V and low levels are below 0.8V relative to ground.
  6. Handling and Storage:

    • Handle with care to avoid electrostatic discharge (ESD) damage. Store in recommended conditions to maintain reliability.
  7. Application Notes:

    • Refer to the datasheet for detailed application circuits and recommendations specific to your use case.
(For reference only)

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