Description
BUY MBI6661GSD https://www.utsource.net/itm/p/12610103.html
Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Unit |
Supply Voltage |
VDD |
Operating |
3.0 |
- |
5.5 |
V |
Output Current per Channel |
IO |
Per Channel |
- |
120 |
- |
mA |
Power Dissipation |
PD |
Continuous Operation |
- |
- |
1400 |
mW |
Operating Temperature |
TOPR |
Junction Temperature |
-40 |
- |
85 |
掳C |
Storage Temperature |
TSTG |
Storage |
-65 |
- |
150 |
掳C |
Input Voltage High |
VIH |
Input Recognition |
2.0 |
- |
VDD |
V |
Input Voltage Low |
VIL |
Input Recognition |
0 |
- |
0.8 |
V |
Instructions for MBI6661GSD
Supply Voltage (VDD):
- Ensure the supply voltage is within the range of 3.0V to 5.5V to avoid damage or malfunction.
Output Current:
- Each channel can provide up to 120mA of current. Do not exceed this limit to prevent overheating and potential damage.
Power Dissipation:
- The device can dissipate up to 1400mW continuously. Ensure adequate heat sinking if operating near this limit.
Temperature Range:
- Operate the device within -40掳C to 85掳C junction temperature and store it between -65掳C and 150掳C.
Input Voltage Levels:
- For reliable operation, input voltages should be set such that high levels are above 2.0V and low levels are below 0.8V relative to ground.
Handling and Storage:
- Handle with care to avoid electrostatic discharge (ESD) damage. Store in recommended conditions to maintain reliability.
Application Notes:
- Refer to the datasheet for detailed application circuits and recommendations specific to your use case.
(For reference only)
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