Description
BUY IRF840BPBF https://www.utsource.net/itm/p/12610108.html
| Parameter |
Symbol |
Min |
Typ |
Max |
Unit |
Conditions |
| Drain-Source On-Resistance |
RDS(on) |
- |
0.55 |
- |
惟 |
VGS = 10V, ID = 1A |
| Gate-Source Threshold Voltage |
VGS(th) |
2.0 |
- |
4.0 |
V |
ID = 250渭A |
| Continuous Drain Current |
ID |
- |
- |
8.0 |
A |
TC = 25掳C |
| Pulse Drain Current |
IDM |
- |
- |
32 |
A |
tPW = 10ms, Duty Cycle = 1% |
| Total Power Dissipation |
PD |
- |
- |
95 |
W |
TC = 25掳C |
| Junction Temperature Range |
TJ |
-55 |
- |
175 |
掳C |
|
| Storage Temperature Range |
TSTG |
-55 |
- |
150 |
掳C |
|
Instructions for Use:
Handling Precautions:
- The IRF840BPBF is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection equipment.
Mounting:
- Ensure good thermal contact between the device and the heat sink to maximize power dissipation.
- Torque screw mounting as specified by manufacturer guidelines to avoid damage.
Biasing:
- Apply gate voltage carefully to avoid exceeding the maximum ratings.
- For optimal performance, operate within the recommended operating conditions.
Pulse Operation:
- When using in pulse mode, ensure that the duty cycle does not exceed the specified limit to prevent overheating.
Storage:
- Store in a dry, cool environment to prevent moisture damage and maintain component integrity.
Testing:
- During testing, do not exceed the maximum drain current or total power dissipation limits to avoid damaging the device.
(For reference only)
More detail about Utsource Holding Company Limited
