Description
BUY IRFR7740TRPBF https://www.utsource.net/itm/p/12610228.html
| Parameter |
Symbol |
Test Conditions |
Min |
Typical |
Max |
Unit |
| Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 4.2A |
|
6.5 |
|
mΩ |
| Gate Threshold Voltage |
VGS(th) |
ID = 250μA |
1.0 |
1.8 |
3.0 |
V |
| Continuous Drain Current |
ID |
TC = 25°C |
|
|
7.0 |
A |
| Pulse Drain Current |
IDM |
tp = 10ms, Duty = 1% |
|
|
40.0 |
A |
| Total Power Dissipation |
PD |
TC = 25°C |
|
|
40.0 |
W |
| Junction Temperature |
TJ |
|
-55 |
|
150 |
°C |
| Storage Temperature Range |
TSTG |
|
-55 |
|
150 |
°C |
Instructions for IRFR7740TRPBF:
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection during handling and installation.
- Mounting: Ensure good thermal contact with the heat sink if operating at high current or power levels. Apply a suitable thermal interface material between the device and the heat sink.
- Operating Limits: Do not exceed the maximum ratings listed in the parameter table. Exceeding these limits can result in permanent damage to the device.
- Gate Drive Requirements: The gate threshold voltage (VGS(th)) defines the minimum gate-source voltage required to turn on the MOSFET. Ensure that the gate drive circuitry can provide sufficient voltage to fully enhance the MOSFET.
- Thermal Considerations: Monitor the junction temperature (TJ) to ensure it stays within specified limits. Proper cooling solutions may be necessary depending on the application.
- Storage and Handling: Store in a dry, cool place. Avoid exposure to high humidity and extreme temperatures.
(For reference only)
More detail about Utsource Holding Company Limited
